Wolfspeed, A Cree Company will be showcasing its latest SiC MOSFET technology at this year’s Applied Power Electronics Conference and Exposition (APEC 2017). The annual conference, which will take place March 26 – 30 in Tampa, FL, is globally recognized as the leading North American technical gathering dedicated to the applied power electronics industry. In addition to their exhibition, Wolfspeed engineers will be presenting at seven conference sessions.
Exhibiting at Booth #1110, Wolfspeed will demonstrate the newly designed low-inductance packaging for its SiC MOSFET family, as well as the new 900V 10mOhm MOSFET in its high-performance three-phase power evaluation unit, and the hardware for a 20kW two-level full-bridge LLC resonant converter using 1000V SiC MOSFETs in a new TO-247-4L package.
“We’re excited to showcase our recent expansions to the Wolfspeed Gen3 SiC MOSFET family, especially the innovative, low-inductance packaging that delivers the industry’s lowest figure of merit – essentially the best ratio of reverse-recovery losses to on-state resistance,” said Guy Moxey, Wolfspeed’s senior director of power products. “Wolfspeed continues to improve and expand upon SiC’s unbeatable performance, reliability, switching speed, and improved thermal management to out-perform Si technology with the most efficient SiC MOSFETs in the market, most recently applied to superior SiC performance in EV applications.”
Wolfspeed will showcase its family of Gen3 SiC MOSFETs – commercially released at 900V, 1000V, and 1200V – in newly designed, low-inductance packaging that delivers the industry’s lowest figure of merit. Examples of practical implementation of these new SiC power MOSFETs in high-performance and reliable power designs will be displayed, including a 20kW LLC converter for battery charger applications, and the new 900V 10mOhm MOSFET for EV drive train applications.
Wolfspeed will also demonstrate an evaluation unit that provides a modular, configurable circuit design and uses standard components to enable design engineers to rapidly optimize three-phase SiC power module designs for improved performance, efficiency, thermal management, and circuit protection. Simplifying and streamlining the design process of incorporating Wolfspeed SiC modules into power systems, the evaluation kit demo shows how the new 900V, 10mOhm MOSFET in the three-phase power evaluation unit enables designers to easily use SiC power modules from 900–1700V and up to 200kW. The evaluation kit utilizes Wolfspeed’s HT-3291-R-VB SiC power module containing four new 900V 10mOhm MOSFETs per switch position enclosed in a redesigned package with >3kV isolation voltage and ITGD2-3011 gate drivers.