STMicroelectronics Signs License and Cooperation Agreement on LDMOS Technology from Innogration

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  • Arrangement expands serviceable RF power market for ST
  • Mature and proven technology is very well suited for applications such as wireless infrastructure; industrial, scientific, and medical; avionics and radar; and non-cellular radio

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications,  announced it has signed an agreement on LDMOS RF power technology from Innogration Technologies, a fabless semiconductor company headquartered in Suzhou, China, specializing in the design and manufacturing of RF power semiconductor devices, modules, and sub-system assemblies.

Combining a short conduction-channel length with a high breakdown voltage, LDMOS devices are well suited for RF power amplifiers where they can be used in base stations for wireless communications systems, as well as in the power amplifiers for commercial and industrial systems. The agreement with Innogration expands the range of applications that ST can address with LDMOS technology.

Terms of the agreements were not disclosed.

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