Vishay Intertechnology, expanded its portfolio of fast body diode n-channel power MOSFETs with the introduction of new 650 V EF Series devices. Augmenting the company’s 600 V offering, the Vishay Siliconix SiHx21N65EF, SiHx28N65EF, and SiHG33N65EF provide additional voltage headroom for industrial, telecom, and renewable energy applications when desired.
Built on E Series superjunction technology, the 650 V fast body diode MOSFETs released today feature a 10x lower reverse recovery charge (Qrr) than standard MOSFETs. This allows the devices to block the full breakdown voltage more quickly, helping to avoid failure from shoot-through and thermal overstress and increasing reliability in zero voltage switching (ZVS) / soft switching topologies such as phase-shifted bridges, LLC converters, and 3-level inverters.
The 21 A SiHx21N65EF is offered in five packages, while the 28 A SiHx28N65EF and 33 A SiHG33N65EF are each available in two. The devices feature low on-resistance down to 157 mΩ, 102 mΩ, and 95 mΩ, respectively, and ultra-low gate charge. These values translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications, including solar inverters, server and telecom power systems, ATX/Silver box PC SMPS, welding equipment, UPS, battery chargers, external electric vehicle (EV) charging stations, and LED, high-intensity discharge (HID), and fluorescent ballast lighting.
The devices are designed to withstand high energy pulses in the avalanche and commutation mode with guaranteed limits through 100 % UIS testing. The MOSFETs are RoHS-compliant and halogen-free.
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