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    Vishay Intertechnology Launches Innovative Half-Bridge IGBT Power Modules

    Vishay Intertechnology, Inc. has unveiled a groundbreaking line of five new half-bridge IGBT power modules, housed in the newly redesigned INT-A-PAK package. These modules, namely the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N, are built on Vishay’s cutting-edge Trench IGBT technology. They offer designers a choice between two technologies — low VCE(ON) or low Eoff — to mitigate conduction or switching losses in high-current inverter stages for transportation, energy, and industry applications.

    These half-bridge devices are a fusion of Trench IGBTs and Gen IV FRED Pt anti-parallel diodes, featuring soft reverse recovery characteristics. The modules’ INT-A-PAK package now boasts a new gate pin orientation, ensuring compatibility with the 34 mm industry-standard package and facilitating mechanical drop-in replacements.

    The modules find applications in various fields, including power supply inverters for railway equipment, energy generation, distribution, storage systems, welding equipment, motor drives, and robotics. Specifically designed for reducing conduction losses in output stages for TIG welding machines, these devices offer a collector-to-emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high-frequency power applications, the other variants boast low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.

    Key features of the VS-GT100TS065S include:

    • VCES: 650 V
    • Continuous Collector Current (IC DC), TC = 80 °C: 185A
    • VCE(on) at 100 A, 25 °C: 1.05 V
    • Chip Level VCE(on) at 100 A, 25 °C: 0.98 V
    • Speed: DC to 1 kHz
    • Package: INT-A-PAK
    • Circuit Configuration: Half-bridge

    These modules offer a 650 V collector-to-emitter voltage, continuous collector current ranging from 100 A to 200 A, and low junction-to-case thermal resistance. UL-approved file E78996 can be directly mounted to heatsinks and provide low EMI to diminish snubbing requirements.

    Introducing these advanced half-bridge IGBT power modules marks a significant advancement in the field, promising enhanced efficiency and performance across various industrial sectors.

    Himanshu Vaibhav
    Himanshu Vaibhav
    Himanshu Vaibhav is a distinguished Technology Journalist associated with and With expertise in researching, writing, and editing, he demonstrates a deep understanding of technology, particularly in the EV industry. His continuous updates on EV, Automotive, and E-mobility industries reflect his commitment to staying at the forefront of emerging trends.

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