STMicroelectronics Reveals Advanced Silicon-Carbide Power Devices to Accelerate Automotive Electrification


Silicon-Carbide Power Devices

Complete set of devices allows full conversion of auto power modules to silicon carbide (SiC) for greater vehicle range, convenience, and reliability

Advanced 6-inch wafer capability and process to bring superior SiC offer to carmakers and automotive suppliers

AEC-Q101 qualification program to complete in early 2017, ready for new OEM product launches 

STMicroelectronics has announced advanced high-efficiency power semiconductors for Hybrid and Electric Vehicles (EVs) with a timetable for qualification to the automotive quality standard AEC-Q101.

In EVs and hybrids, where better electrical efficiency means greater mileage, ST’s latest silicon-carbide (SiC) technology enables auto makers to create vehicles that travel further, recharge faster, and fit better into owners’ lives. A leader in silicon carbide, ST is among the first to present new-generation rectifiers and MOSFETs for high-voltage power modules and discrete solutions addressing all the vehicle’s main electrical blocks.These include the traction inverter, on-board battery charger, and auxiliary DC-DC converter.

Today’s power modules typically rely on standard silicon diodes and Insulated Gate Bipolar Transistors (IGBTs). Silicon carbide is a newer, wide-band gap technology that allows smaller device geometries capable of operating well above the 400V range of today’s electric and hybrid drive trains. The smaller SiC diode and transistor structures present lower internal resistance and respond more quickly than standard silicon devices, which minimize energy losses and allow associated components to be smaller, saving even more size and weight.

“Major carmakers and automotive Tier-1s are now committing to silicon-carbide technology for future product development to leverage its higher aggregate efficiency compared to standard silicon in a wide range of operating scenarios,” said Mario Aleo, Group Vice President and General Manager, Power Transistor Division, STMicroelectronics. “Our SiC devices have demonstrated superior performance and reached an advanced stage of qualification as we support customers preparing to launch new products in the 2017 timeframe.”

ST has been among the first companies to produce silicon-carbide high-voltage MOSFETs, with its first 1200V SiC MOSFET introduced back in 2014, achieving industry-leading 200°C rating for more efficient and simplified designs.

The Company is using the industry’s most advanced processes to fabricate SiC MOSFETs and diodes on 4-inch wafers. In order to drive down the manufacturing costs, improve the quality, and deliver the large volumes demanded by the auto industry, ST is scaling up its production of SiC MOSFETs and diodes to 6-inch wafers, and is on schedule to complete both conversions by the end of 2016.

ST has already qualified its 650V SiC diodes to AEC-Q101, and will complete qualification of the latest 650V SiC MOSFETs and 1200V SiC diodes in early 2017. The qualification of the new-generation 1200V SiC MOSFETs will be completed by the end of 2017.

The STPSC20065WY 650V SiC diode is in full production now in DO-247.The range also includes lower current ratings and smaller form-factor TO-220 package options.The STPSC10H12D 1200V SiC diode is sampling now to lead customers in the TO-220AC package and goes to production this month, with volume productionof the automotive-grade version planned for Q4 2016.Multiple current ratings from 6A to 20A and packaging options will also be available.

The SCTW100N65G2AG 650V SiC MOSFET is sampling now to lead customers in the HiP247 package. It will ramp up in volumes in H1 2017. To enable more compact designs, a 650V SiC MOSFET in the surface-mount H2PAK will also be qualified to AEC-Q101 in H1 2017.

For further information on ST’s portfolio of SiC devices please refer to for MOSFETs or for diodes.