“We are excited to continue working together with Samsung in developing products that lead the mobile industry,” said Keith Kressin, senior vice president, product management, Qualcomm Technologies. Inc. “Using the new 10nm process node is expected to allow our premium tier Snapdragon 835 processor to deliver greater power efficiency and increase performance while also allowing us to add a number of new capabilities that can improve the user experience of tomorrow’s mobile devices.”
In October, Samsung announced they are the first in the industry to enter mass production of 10nm FinFET technology. Compared to its 14nm FinFET predecessors, Samsung’s 10nm technology allows up to a 30% increase in area efficiency with 27% higher performance or up to 40% lower power consumption. Using 10nm FinFET, the Snapdragon 835 processor will offer a smaller chip footprint, giving OEMs more usable space inside upcoming products to support larger batteries or slimmer designs. Process improvements, combined with a more advanced chip design, are expected to bring significant improvements in battery life.
“We are pleased to have the opportunity to work closely with Qualcomm Technologies in producing the Snapdragon 835 using our 10nm FinFET technology,” said Jong Shik Yoon, executive vice president and head of foundry business, Samsung. “This collaboration is an important milestone for our foundry business as it signifies confidence in Samsung’s leading chip process technology.”
Snapdragon 835 is in production now and expected to ship in commercial devices in the first half of 2017. Snapdragon 835 follows the Snapdragon 820/21 processor, which has over 200 designs in development.