To save space and power in high-efficiency synchronous buck converters for automotive applications,
Vishay Intertechnology has introduced the industry’s first AEC-Q101-qualified 12 V and 20 V MOSFETs in a dual asymmetric power package. The Vishay Siliconix SQJ202EP and SQJ200EP n-channel TrenchFET® devices each combine a high- and low-side MOSFET in the compact 5 mm by 6 mm PowerPAK®SO-8L dual asymmetric package, with low-side maximum on-resistance down to 3.3 mΩ.
By co-packaging two MOSFETs in an asymmetric package — with a larger low-side MOSFET for lower on-resistance and smaller high-side MOSFET for faster switching — the 12 V SQJ202EP and 20 V SQJ200EP provide high-performance alternatives to standard dual devices, which restrict the optimum combination of MOSFETs for high-current, high-frequency synchronous buck designs. Compared to using discrete components, the devices occupy less board space and can facilitate more compact PCB layouts.
The devices released today offer high-temperature operation to +175 °C to provide the ruggedness and reliability required for automotive applications such as infotainment, telematics, navigation, and LED lighting. The SQJ202EP is well-suited for applications with bus voltages ≤ 8 V and offers extremely low maximum on-resistance down to 3.3 mΩ for the Channel 2 low-side MOSFET. For applications with higher bus voltages, the 20 V SQJ200EP features a slightly higher maximum on-resistance of 3.7 mΩ. Both parts are 100 % tested for gate resistance and avalanche, and they are RoHS-compliant and halogen-free.