high speed switching

Toshiba Corporation’s (TOKYO: 6502) Storage & Electronic Devices Solutions Company today announced the launch of 800V super junction N-channel power MOSFETs  for high efficiency power supplies with improved low on-resistance and high speed switching. By utilizing the super junction structure, the eight new MOSFETs of the “DTMOS IV seriesachieve approximately 79% reduction in on-resistance per area (RON x A) compared to Toshiba’s previous “π-MOSVIII series.” Its improved high-speed switching can also contribute to the efficiency of the power supplies of the sets that it is used in. The MOSFETs are suited for use in industrial power supplies, standby power supply for servers, adaptors and chargers of notebook PCs and mobile devices, and in power supplies for LED lighting. Shipments start from today.

Line-up and Main Specifications of the New MOSFETs

(@Ta=25°C)

Part Number Package Absolute Maximum Rating RDS(ON)
@VGS=10 V
(Ω)
Qg typ.
@VDD≈640 V,
VGS=10 V,
ID=Maximum Rating
(nC)
Cisstyp.
@VDS=300 V,
VGS=0 V,
f=1 MHz
(pF)
VDSS
@
ID=10 mA
(V)
ID
(A)
TK17A80W TO-220SIS 800 17 0.29 32 2050[1]
TK12A80W TO-220SIS 800 11.5 0.45 23 1400
TK10A80W TO-220SIS 800 9.5 0.55 19 1150
TK7A80W TO-220SIS 800 6.5 0.95 13 700
TK17E80W TO-220 800 17 0.29 32 2050[1]
TK12E80W TO-220 800 11.5 0.45 23 1400
TK10E80W TO-220 800 9.5 0.55 19 1150
TK7E80W TO-220 800 6.5 0.95 13 700

[1] Measurement condition f=100 kHz

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