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    600 V and 650 V E Series MOSFETs in PowerPAK SO-8L by Vishay

    MOSFETs Provide Space-Saving Alternative to Devices in TO-252 (DPAK) Package for Lighting, Computing, and Consumer Applications

    1212npdtvishayVishay Intertechnology  has announced that it has extended its offering of 600 V and 650 V E Series power MOSFETs with three new n-channel devices in the compact PowerPAK SO-8L package. Providing space-saving alternatives to MOSFETs in the TO-252 (DPAK) package, the Vishay Siliconix 600 VSiHJ8N60E and 650 V SiHJ6N65E and SiHJ7N65E increase reliability and provide reduced package inductance for lighting, industrial, telecom, computing, and consumer applications.

    Designed and developed by Vishay Siliconix, the surface-mount PowerPAK SO-8L package of the MOSFETs released today is fully RoHS-compliant, halogen-free, and lead (Pb)-free. Measuring only 5 mm by 6 mm, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E occupy only half the board space, with half the height, of devices in the TO-252 (DPAK) package. Also, compared to MOSFETs in leadless DFN packages, the gullwing lead construction of the PowerPAK SO-8L can offer improved board-level reliability when subjected to temperature cycling over the lifetime of the equipment.

    Built on Vishay’s latest energy-efficient E Series superjunction technology, the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E feature low maximum on-resistance down to 0.52 Ω at 10 V, ultra-low gate charge down to 17 nC, and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. These values translate into extremely low conduction and switching losses to save energy in power factor correction, flyback and two-switch forward converters, and hard-switched topologies for HID and LED lighting, and industrial, telecom, consumer, and computing power adapters.

    The MOSFETs are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing.

    Device Specification Table:

    Part number VDS (V) VGS (V) ID (A) @ +25 °C RDS(ON) (Ω) @ 10 V (max.) Qg (nC) @ 10 V 
    SiHJ8N60E 600 ± 30 8.0 0.520 22
    SiHJ6N65E 650 ± 30 5.6 0.868 16
    SiHJ7N65E 650 ± 30 7.9 0.598 22

    Samples and production quantities of the SiHJ8N60E, SiHJ6N65E, and SiHJ7N65E MOSFETs are available now, with lead times of 16 weeks.

    For more info visit:

    ELE Times Bureau
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